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Article information
2007 , Volume 12, ¹ 5, p.52-67
Gorobchuk A.G., Grigoryev Y.N.
Effect of rf-discharge on silicon etching in CF4/O2
The effect of RF-discharge on silicon etching process in tetrafluoromethane - oxygen mixture in a plasma-chemical reactor is investigated numerically. It was shown that the decrease of average density of energy electrons in the reactor due to the oxygen inflow can decrease the etching rate by up to 30.
[full text] Author(s):
Gorobchuk Aleksey Gennadievich
Dr.
Position: Senior Research Scientist
Office: Federal Research Center for Information and Computational Technologies
Address: 630090, Russia, Novosibirsk, Ac. Lavreniev ave., 6
Phone Office: (383) 330-87-45
E-mail: al@ict.nsc.ru
SPIN-code: 2930-1281Grigoryev Yurii Nikolaevich
Dr. , Professor
Position: General Scientist
Office: Federal Research Center for Information and Computational Technologies
Address: 630090, Russia, Novosibirsk, Ac. Lavrentiev ave., 6
Phone Office: (383) 330 87 45
E-mail: grigor@ict.nsc.ru
Bibliography link:
Gorobchuk A.G., Grigoryev Y.N. Effect of rf-discharge on silicon etching in CF4/O2 // Computational technologies. 2007. V. 12. ¹ 5. P. 52-67
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